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| SMD Type NPN Transistors KMBT3904(MMBT3904) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 Epitaxial planar die construction 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 60 40 6 0.2 0.2 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collecto- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base - emitter saturation voltage Delay time Rise time Storage time Fall time Transition frequency Symbol VCBO VCEO VEBO IcBO IcEO IEBO hFE Ic= 100 iA Ic= 1 mA IE= 10 A Testconditons IE=0 IB=0 IC=0 Min 60 40 6 0.1 50 0.1 100 60 0.3 0.95 35 35 200 50 250 MHz ns V V ns 400 Typ Max Unit V V V A nA A VCB= 60 V , IE=0 VCE= 30 V , VBE(off)=3V VEB= 5V , IC=0 VCE= 1V, IC= 10mA VCE= 1V, IC= 50mA VCE(sat) IC=50 mA, IB= 5mA VBE(sat) IC= 50 mA, IB= 5mA td tr ts tf fT VCC=3.0V,VBE=-0.5V IC=10mA,IB1=-IB2=1.0mA VCC=3.0V,IC=10mA IB1=-IB2=1.0mA VCE= 20V, IC= 10mA,f=100MHz Marking Marking 1AM +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KMBT3904(MMBT3904) Typical Characteristics Transistors Fig.1 Max Power Dissipation vs Ambient Temperature Fig.2 Input and Output Capacitance vs. Collector-Base Voltage Fig.3 Typical DC Current Gain vs Collector Current Fig.4 Typical Collector-Emitter Saturation Voltage vs. Collector Current Fig.5 Typical Base-Emitter Saturation Voltage vs. Collector Current 2 www.kexin.com.cn |
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